发明名称 |
Method for manufacturing accelerometer sensor |
摘要 |
A method of manufacturing an accelerometer sensor having a mass portion is disclosed. A P-type silicon area is formed in an upper area of a P-type silicon substrate by means of impurity doping. An N-type silicon layer is formed on the silicon substrate through vapor phase epitaxy. A recess defining the mass portion is formed in the silicon substrate through an etching process. A current is supplied to the silicon substrate in an electrolytic solution, such as HF aq., while the substrate is connected to an anode of a power supply. The P-type silicon area is then converted to a porous silicon area. The porous silicon area is subjected to a wet etching to be hollowed, thus obtaining a mass portion of a desired shape.
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申请公布号 |
US5725785(A) |
申请公布日期 |
1998.03.10 |
申请号 |
US19960604720 |
申请日期 |
1996.02.21 |
申请人 |
KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO |
发明人 |
ISHIDA, TATSUYA;WATANABE, AKIHIKO |
分类号 |
B81B3/00;G01P15/08;G01P15/12;G01P15/18;H01L29/84;(IPC1-7):H01L21/00;B44C1/22 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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