发明名称 METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent fouling of piping by capturing fine particles and fogs of a solid organometallic raw material before moving to the outside of a hermetically sealed tank. SOLUTION: In this metal organic chemical vapor deposition apparatus provided with an organometallic gas feeding source 60, a first region 1 and a second region 2 hermetically separated is formed in a hermetically sealed tank 10 and the first region 1 is formed as a region for housing a solid organometallic raw material 31 and the second region 2 is formed as a region for accumulating fine particles and fogs blown up from the first region 1.
申请公布号 JPH1067594(A) 申请公布日期 1998.03.10
申请号 JP19960224013 申请日期 1996.08.26
申请人 SONY CORP 发明人 IMANISHI DAISUKE
分类号 C30B25/14;C23C16/18;C23C16/44;C23C16/448;C30B29/40;H01L21/205;H01L33/30 主分类号 C30B25/14
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