| 摘要 |
PROBLEM TO BE SOLVED: To provide the method for forming the positive resist composition and for forming a resist pattern small in change of sensitivity due to film thickness and small in film decrease even in the case of a resist micropattern and wide in the depth of focus against deviation of exposure and small in dimensional fluctuation to the mask size. SOLUTION: The positive resist composition of a mixed solvents (A) an alkali-soluble resin, (B) a compound having a quidnonediazido group, and (C) organic solvents comprising (a) 2-heptanone and (b) ethyl lactate and (c) a solvent having a high boiling point of 200-350 deg.C, and the method for forming the resist pattern used this positive resist composition. |
