| 摘要 |
A method for measuring the CD(critical dimension) of a wafer is provided to reduce charging of SEM(scanning electron microscopy) in a wafer by reducing a time interval of the wafer exposed to an electron beam in measuring the CD of the wafer by SEM equipment during a photolithography process. A wafer is loaded(S10). The wafer is aligned(S20). The wafer is transferred to a measure point(S30). The wafer is focus-offset transferred(S40). The CD image of the wafer is captured(S50). The CD is calculated from the image(S60). In focus-offset transferring the wafer, the wafer is transferred to a focus offset inputted in setting up an initial job file so as to be focused.
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