| 摘要 |
PROBLEM TO BE SOLVED: To suppress operational failure rate of an element due to radiation by providing a capacitor, employing a ferroelectric material in the capacitive insulator and a high radiation material in the sandwiching electrodes, on a semiconductor substrate of such structure as a semiconductor layer is provided on an insulation layer. SOLUTION: A semiconductor substrate 1 has SOI structure comprising an insulation layer 1b and a thin semiconductor layer 1c formed sequentially on a supporting substrate 1a. A capacitor 4 comprises a lower electrode 4a, a capacitive insulation layer 4b and an upper electrode 4c formed sequentially. The lower electrode 4a is composed of such material as platinum(Pt) having high oxidation resistance, low reactivity and high workability in order to prevent deterioration of the capacitor 4. The capacitive insulation layer 4b is composed of a PbZrx Ti1-x O3 based dielectric material, for example, and the upper electrode 4c is composed of platinum(Pt) for same reason as the lower electrode 4a. |
