| 摘要 |
PROBLEM TO BE SOLVED: To improve element characteristics by inserting a compound layer of Se and metal between a P type compound layer and a metal layer, and constituting an electrode with an Se metal compound layer and the metal layer. SOLUTION: An n<+> type GaAs substrate or n<+> type ZnSe substrate 1 is overlaid with an n type clad layer 2 of Zn, Se, Mg, S, Te, etc., an active layer 3 of Zn, Se, Cd, etc., a p type clad layer 4 of Zn, Se, Mg, S, Te, etc., and a p type ZnSe contact layer 5 in this order, to form a light-emitting element. And the p type ZnSe contact layer 5 is overlaid with an electrode 8a comprising a compound layer 6 of Se and metal and a metal layer 7. These layers are formed in electron beam vapor deposition method, etc. The compound layer 6 of Se and metal is formed having a thickness of about several Å, and the metal layer 7 is about 100nm. Thereby contact resistance between the Se contact layer and the electrode in the light-emitting element is reduced, so that element characteristics is improved. |
