| 摘要 |
<p>A gallium nitride group compound semiconductor light-emitting device comprises substrate and a layered structure provided on the substrate. The layered structure includes: an active layer; an upper cladding layer and a lower cladding layer which is located closer to the substrate than the upper cladding layer, the active layer interposed between the cladding layers; an internal current constricting layer having an opening for constricting a current within a selected region of the active layer, the internal current constricting layer being provided on the upper cladding layer; a surface protecting layer for covering the internal current constricting layer and an exposed surface of the upper cladding layer in the opening of the internal current constricting layer; and a regrowth layer provided on the surface protecting layer. The surface protecting layer serves as a protecting layer for the upper cladding layer and the internal current constricting layer in a step of forming the regrowth layer. <IMAGE></p> |
