摘要 |
PURPOSE: To improve the surface protection and photoelectric conversion efficiency of an integrated photodetector having a photodetecting part and circuit part integrated on one chip. CONSTITUTION: A photodetecting part and circuit part are integrated on one chip with a silicon nitride film 13 as a surface protective film. Openings are formed through the surface protective film on the surface of the photodetecting part, leaving the protective film for protecting an Al electrode part 12 connected to the photodetecting part, and anti-reflection films 14 and 15 are formed on the surface of the photodetecting part in the openings, thereby improving the photoelectric conversion efficiency. |