| 摘要 |
A method for manufacturing an STI of a semiconductor device is provided to form an oxide layer into a trench and to reduce generation of water mark by injecting ozone water or hydrogen peroxide into a phosphoric acid solution. Plural insulating layers(111,112,113) are sequentially formed on a semiconductor substrate(100). A trench is formed from an upper of the insulating layers to a certain depth of the semiconductor substrate. The semiconductor substrate on which the trench is formed is dipped into a phosphoric acid solution in order to etch and remove portions of the plural insulating layers. Ozone water or hydrogen peroxide is injected into the phosphoric acid solution. The plural insulating layers are an oxide layer, a nitride layer, and a TEOS layer which are sequentially formed on the semiconductor substrate. An oxide layer is formed on an inner wall of the semiconductor substrate configuring the trench.
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