发明名称 PLUG FORMING METHOD FOR SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To guide a growing metal in the vertical direction in contact holes, to avoid overetching due to the density difference in the growing direction of the metal buried in the contact holes by using a metal different in nature. SOLUTION: On a first metal layer 15 contg. second metal layer spacers 16A, a third metal layer 17 for the plug is formed and made of one of Al, Cu and Ta, the same as the first layer 15. The first layer 15 little grows from the spacers 16A made of a different metal but quickly from the first layer 15 because of the same metal. Thus, the third metal in contact holes 19 grows mostly in the vertical direction to result in a uniform density of the third layer 17.
申请公布号 JPH1064844(A) 申请公布日期 1998.03.06
申请号 JP19970165855 申请日期 1997.06.23
申请人 HYUNDAI ELECTRON IND CO LTD 发明人 SAI KYONKON
分类号 H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/28 主分类号 H01L21/28
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