发明名称 PHOTOELECTRIC TRANSDUCER
摘要 PROBLEM TO BE SOLVED: To obtain a photoelectric transducer, wherein absorption of light to semiconductor is increased and conversion efficiency is high by forming a photoelectric conversion layer and an incident light side transparent conducting layer, on a ZnO layer which is whitely muddy on a substrate. SOLUTION: A ZnO layer 103 is deposited on an Al substrate 101, by using a ZnO target to which Cu of 5% is added. The surface of the ZnO layer is uneven. A substrate on which a lower electrode is formed is set in a capacitance-coupled high-frequency CVD equipment, and high vacuum evacuation is performed by an evacuation pump. When the pressure is stabilized, plasma is generated, and an n-type a-Si layer 105, an i-type a-Si layer 106 and a p-type μc-Si layer 107 are formed on the transparent layer 103. After a specimen is taken out from the high-frequency CVD equipment, and ITO is deposited by a resistance-heating vacuum deposition equipment, paste containing iron chloride aqueous solution is printed, the pattern of a desired transparent electrode 108 is formed, Ag paste is screen-printed, and a collector electrode 109 is formed, thereby obtaining a solar cell.
申请公布号 JPH1065197(A) 申请公布日期 1998.03.06
申请号 JP19970146584 申请日期 1997.06.04
申请人 CANON INC 发明人 TOYAMA JO;NAKAGAWA KATSUMI
分类号 B60R16/04;H01L31/04 主分类号 B60R16/04
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