| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable a TFT(thin-film transistor) to be enhanced in mobility, reduced to zero in parasitic capacity, set applicable to a liquid crystal display device of large capacity and high accuracy, shortened in manufacturing process, and improved in productivity. SOLUTION: A second gate electrode 30 is formed in a self-aligned manner using a first gate electrode 20 as a mask, an offset region formed of an n-type polycrystalline silicon layer 23 is provided between a source electrode 24 and a semiconductor layer 22, and between a drain electrode 26 and a semiconductor layer 22, and the offset region is formed in a self-aligned manner using the gate electrode 30 as a mask.</p> |
