METHOD AND DEVICE FOR TREATMENT

摘要

An exclusive carrier (EQMC) housing therein equipment monitoring wafers (EQMW) is housed in a carrier housing rack (32) of a treatment equipment. An equipment monitoring parameter setting section (62) is provided for setting a cycle, in which the equipment monitoring wafers (EQMW) are carried in a heat treating furnace (21), and the number and holding position of the equipment monitoring wafers on a wafer boat (23). The equipment monitoring wafers (EQMW) are held in dummy wafer holding regions (D) at the upper and lower end portions of the wafer boat (23) to be heat-treated in the set cycle. After the heat treatments of all the equipment monitoring wafers (EQMW) in the equipment monitoring carrier (EQMC) are completed, the wafers (EQMW) are transferred to a detecting device, and the state of the treatment equipment is grasped on the basis of the treated state. Thus, when semiconductor wafers are treated by means of a batch heat treatment equipment, the state of the treatment equipment can be monitored by means of the equipment monitoring wafer, and the treatment equipment can be easily used.