| 摘要 |
<p>PURPOSE:To prevent the influence of the internal polarization phenomenon which arises when a polyimide resin is used as an oriented film by using a picture element electrode substrate which has insulating protective films laminated on a part of respective picture element electrodes and the oriented film of the polyimide resin covering the respective picture element electrode parts which are not laminated with the insulating protective films. CONSTITUTION:After gate wirings, source wirings 14, TFTs 15 and the picture element electrodes 12 are formed on a transparent substrate 11, silicon nitride (SiNx) is formed to a prescribed thickness. The SiNx film is coated with a photoresist and is subjected to mask exposing then to etching with hydrofluoric acid to remove the SiNx film laminated on the parts, exclusive of the peripheral edges, of the picture element electrodes 12 and the SiNx film laminated on the unnecessary parts, such as junctures to external terminals. The insulating protective films 16 are then formed. The polyimide resin is thereafter laminated over the entire surface on the side laminated with the insulating protective films 16, by which the oriented film 17 is formed. The generation of the internal polarization is suppressed in the parts where the oriented film of the polyimide resin is directly laminated on the picture element electrodes. The high-grade display which is free from the degradation and unequalness of contrast is thus obtd.</p> |
