| 摘要 |
<p>An electro-optical semiconductor resonant tunneling device structure which can be configured to detect electro-magnetic radiation comprises a highly doped first terminal 3 formed on the upper surface of a semiconductor substrate 1. A gate 7, is formed overlying the first terminal 3. A pit is etched into the gate 7, and a plurality of layers are formed overlying the relief of the patterned base layers 13. The gate 7 surrounds the layers though which transport occurs. A second terminal 31 is formed overlying the structure. To enhance a detected electro-magnetic radiation signal coupling means such as an antenna or a diffraction grating 33 are provided. The device can be configured as an electro-optical memory when used in conjunction with a LED on a laser with a coupling waveguide (117) to excite carriers into trapped states in the quantum well (figure 9).</p> |
