| 摘要 |
Power transistors, especially MOSFETs and IGBTs, must be protected adequately in the ON state against a short circuit in the load circuit, in order to avoid their destruction. Until now, the power transistor was turned off if a short-circuit current appeared by providing that its gate-to-source path, in the event of a short circuit, was short-circuited through another transistor, and the power transistor was thus turned off. However, if that readjustment of the current took place too fast, the power transistor was able to be damaged by overvoltage. That is counteracted by a voltage sensor configuration, which detects the voltage change in the load path of the power transistor and reduces the potential at the control terminal connection of the other transistor if the output voltage rises.
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