| 摘要 |
A method forms a thin film resistor with a thick film resistor on one hybrid IC substrate, and provides a high efficiency hybrid IC utilizing advantages of both resistors. The method includes the steps of: screen-printing a thick film resistor paste on an alumina substrate, drying and performing a plastic process, and thus forming a thick film resistor; forming a thick film protecting layer on the thick film resistor; sequentially forming a tantalum (Ta) layer for a thin film resistor, a titanium (Ti) layer, a palladium (Pd) layer and a copper (Cu) layer for a conduction line on the substrate; depositing a negative photoresist layer on the Cu layer, light-exposing necessary portions of the negative photoresist layer to ultraviolet rays; sequentially electroplating a copper (Cu) layer, a nickel (Ni) layer and a gold (Au) layer on the copper (Cu) layer portions which are exposed due to an elimination of the negative photoresist layer, making a conduction line, and removing a remaining light-exposure portion of the negative photoresist layer; etching titanium (Ti) layer, palladium (Pd) layer and copper (Cu) layer of a remaining portion including the conduction line, and depositing a positive photoresist layer thereon; light-exposing necessary portions in the positive photoresist to ultraviolet rays, etching tantalum (Ta) layer portions exposed in the vicinity of removed portions, and forming a thin film resistor.
|
