GATE SPACERS AND METHODS OF FORMING

摘要

A method and a structure for forming a device of a transistor or the like are described. An embodiment of the method comprises the following steps: forming a gate spacer along a sidewall of a gate stack on a substrate; passivating at least a part of an exterior surface of the gate spacer; and epitaxially growing a material inside the substrate proximate to the gate spacer while at least the part of the exterior surface of the gate spacer is passivated. The passivating step can include a step using at least one among a thermal treatment, a plasma treatment, or a wet treatment.