| 发明名称 |
METHOD OF GROWING SEMICONDUCTOR COMPOUND CRYSTALS |
| 摘要 |
FIELD: microelectronics. SUBSTANCE: when manufacturing discrete semiconductor devices and integrated circuits, starting material is melted, shape of crystallization front is recorded, and thermodynamic parameters of monocrystal growth according to specified dependence are restored. EFFECT: optimized growth of monocrystal. 1 dwg.
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| 申请公布号 |
RU2105831(C1) |
申请公布日期 |
1998.02.27 |
| 申请号 |
RU19950115631 |
申请日期 |
1995.09.05 |
| 申请人 |
NAUCHNO-ISSLEDOVATEL'SKIJ TSENTR KOSMICHESKOJ SIST;NI SKIJ TS KOSM SIST |
发明人 |
OZERNYKH I.L.;BITUSHAN E.I.;DRAKOV A.A.;SAJAPIN S.N.;SVIRIDENKO I.P.;OZERNYKH I.L.;BITUSHAN E.I.;DRAKOV A.A.;SAJAPIN S.N.;SVIRIDENKO I.P. |
| 分类号 |
C30B11/02;(IPC1-7):C30B11/02 |
主分类号 |
C30B11/02 |
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