发明名称 |
Method of manufacturing a non-volatile memory device |
摘要 |
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
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申请公布号 |
US7977227(B2) |
申请公布日期 |
2011.07.12 |
申请号 |
US20080216679 |
申请日期 |
2008.07.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;SHIH YEN-HAO;LUE HANG-TING;LAI ERH-KUN;HSIEH KUANG YEU |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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