发明名称 CHEMICAL VAPOR DEPOSITION OF FLUORINE-DOPED ZINC OXIDE
摘要 <p>Films of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, an oxygen source, and a fluorine source. For example, a vapor mixture of the N, N, N', N'-tetraethylethylenediamine chelate of diethylzinc, ethanol, hexafluoropropene and nitrogen deposits fluorine-doped zinc oxide films on substrates heated to temperatures around 450 °C. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity. These films are useful in solar cells, flat-panel display devices, electrochromic absorbers and reflectors, energy-conserving heat mirrors, and anti-static coatings.</p>
申请公布号 WO1998008245(A2) 申请公布日期 1998.02.26
申请号 US1997011552 申请日期 1997.08.13
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