发明名称 Simulation method in lithographic process
摘要 A simulation method for simulating in a lithographic process is disclosed, and the method can expect a size of a resist pattern by obtaining a diffused aerial image model(DAIM) by determining a simplified model in a aerial image to represent a resist process without simulating full processes including a resist process, and then applying the DAIM to a threshold model.
申请公布号 GB9727241(D0) 申请公布日期 1998.02.25
申请号 GB19970027241 申请日期 1997.12.23
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人
分类号 G01R31/26;G03F7/004;G03F7/20;H01J37/305;H01L21/00;H01L21/027 主分类号 G01R31/26
代理机构 代理人
主权项
地址