发明名称 |
FILM-FORMING APPARATUS AND FILM-FORMING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To uniformize the thickness of a thin film and increase the sharpness of the variation of the composition at the interface of the thin film. SOLUTION: A chamber 11 for heating and reacting a raw material gas contains a gas-feeding part 12 to feed the raw material gas from the outside of the chamber 11 into the chamber 11 and a substrate holder 14 placed opposite to the gas-feeding port 12a of the gas feeding part 12 and holding a film-growing substrate 13. The apparatus is further provided with a rotary member 16 composed of a high-speed rotary disk 16a having a ring-shaped flat high-speed rotation face and positioned outside of the substrate holder 14, a concave covering part 16b integrated with the inner circumference of the high-speed rotary disk 16a, covering the substrate holder 14 and a heater 15 and having an opening at the center of the bottom part and a cylindrical rotary shaft 16c integrally formed in such a manner as to be extended downward from the circumference of the opening of the covering part 16b and hermetically supported by a bearing 11a on the bottom of the chamber 11.</p> |
申请公布号 |
JPH1053500(A) |
申请公布日期 |
1998.02.24 |
申请号 |
JP19960204443 |
申请日期 |
1996.08.02 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OTSUKA NOBUYUKI;KITO MASAHIRO;ISHINO MASATO;MATSUI YASUSHI |
分类号 |
C30B25/14;C23C16/44;C23C16/458;C30B25/16;C30B29/40;C30B35/00;H01L21/205;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):C30B35/00 |
主分类号 |
C30B25/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|