发明名称 FILM-FORMING APPARATUS AND FILM-FORMING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To uniformize the thickness of a thin film and increase the sharpness of the variation of the composition at the interface of the thin film. SOLUTION: A chamber 11 for heating and reacting a raw material gas contains a gas-feeding part 12 to feed the raw material gas from the outside of the chamber 11 into the chamber 11 and a substrate holder 14 placed opposite to the gas-feeding port 12a of the gas feeding part 12 and holding a film-growing substrate 13. The apparatus is further provided with a rotary member 16 composed of a high-speed rotary disk 16a having a ring-shaped flat high-speed rotation face and positioned outside of the substrate holder 14, a concave covering part 16b integrated with the inner circumference of the high-speed rotary disk 16a, covering the substrate holder 14 and a heater 15 and having an opening at the center of the bottom part and a cylindrical rotary shaft 16c integrally formed in such a manner as to be extended downward from the circumference of the opening of the covering part 16b and hermetically supported by a bearing 11a on the bottom of the chamber 11.</p>
申请公布号 JPH1053500(A) 申请公布日期 1998.02.24
申请号 JP19960204443 申请日期 1996.08.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTSUKA NOBUYUKI;KITO MASAHIRO;ISHINO MASATO;MATSUI YASUSHI
分类号 C30B25/14;C23C16/44;C23C16/458;C30B25/16;C30B29/40;C30B35/00;H01L21/205;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):C30B35/00 主分类号 C30B25/14
代理机构 代理人
主权项
地址