FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF FIELD-EFFECT TRANSISTOR,申请号JP19960272541-传众专利搜索

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发明名称	FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH1056026(A)	申请公布日期	1998.02.24
申请号	JP19960272541	申请日期	1996.10.15
申请人	FUJITSU LTD	发明人	KANEKO YOSHIAKI
分类号	H01L29/872;H01L21/06;H01L21/338;H01L21/8232;H01L27/06;H01L29/47;H01L29/812;(IPC1-7):H01L21/338;H01L21/823	主分类号	H01L29/872
代理机构		代理人
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