| 摘要 |
PROBLEM TO BE SOLVED: To prevent the formation of WSi2 in reaction of a W film with Si in a contact region almost completely, by forming the laminated structure of a Ti film, an MOCVD-TiN film and the W film for a bit line. SOLUTION: A bit line 20 is obtained by forming by patterning in an etching process utilizing a mask after a Ti film 5, an MOCVD-TiN film 6 and a W film 7 are sequentially laminated. The Ti film 5 is formed to the thickness of 50-1,000Å. For the MOCVD-TiN film 6, TDMAT or TDEAT is used as the raw material, and the film is evaporated to the thickness of 50-1,000Å by a CVD method. Furthermore, the W film 7 is evaporated to the thickness of 500-5,000Å by a CVD method. |
