| 摘要 |
PROBLEM TO BE SOLVED: To enable a memory array to be programmed by metallization and besides, make it very elaborate by connecting a first island to a first column and a second island to a second column thereby materializing an active transistor. SOLUTION: Activated columns are separated from one another with thick oxides. The rows Li and Li+1 of polysilicon extend to above a thick oxide on one hand and to above the thin oxide region made on an active region on the other, at a fixed interval. Next, n-type implant is applied to this structure to form a second conductivity type of island 21 within an active column between gate regions. Then, it is coated for flattening. The island 21 is connected to the pad 23 on the level of first metallization by a via 22. The pad 23 is connected to the higher level 25 of metallization corresponding to an arrow Cj by a via 24, or it is connected to the metallization on the same level constituting a reference column. |
