| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric substance with a leak current, and a multi-scale ferroelectric memory using the leak current. SOLUTION: A gate insulating body is made of dielectric, highly dielectric or ferroelectric material. A ferroelectric capacitor is deposited at an upper part of the gate insulating body to use the upper electrode as a gate. A leak current from the dielectric material as the gate insulating body is put in Schottky or Frenkel emission by selecting the material adequately. A voltage with a constant amplitude is applied between the gate and the bit line to induce a charge in an area between a drain 3 and a source 2 and carry out a write operation. Then, various levels of higher voltages with the constant pulse width or delete voltages with the same level and various pulse widths are applied to generate various kinds of induced charges at a channel between the drain 3 and the source 2 and store multi-scale data.</p> |
