| 摘要 |
PROBLEM TO BE SOLVED: To provide a superlattice structure which can confine carries efficiently by enabling the height of an energy barriers to be controlled artificially. SOLUTION: First semiconductor material layers 10 and second semiconductor material layers 11 different in band gap from each other are made alternately. Then, the physical quantity of the first and second semiconductor materials is set to be an odd multiple of π of the difference between the phases of the reflected waves of the incident electrons at the interface between the first semiconductor material layer 10 and the second semiconductor material layer 11. By constituting it this way, the incident electrons reflects powerfully by the superlattice, and the energy barrier to the incident electrons become higher equivalently. |
