| 摘要 |
PROBLEM TO BE SOLVED: To perform simultaneously the applications of resists to many bar-form laser devices and their patternings with the good controllabilities of their film thicknesses, by forming first dielectric films on the end surfaces of the resonators of the many bar-form semiconductor laser devices, and by forming resist films in predetermined shapes both on the end surfaces of the resonators and on supporting-base portions present between the resonators to thin thereafter the resist films. SOLUTION: Dropping several tens drops of a positive type photoresist 32 on a cover glass 31 used as a supporting base, uniform resist films are formed. Thereon, several tens of semiconductor devices 33 (bars 33) cleft in the form of bars are so arranged successively as for the electrodes present near their light emission portions to face down. After drying the bars 33, they are exposed to incline the cover glass 31, forming an angle of about 45 deg. with an exposure light source. After these exposures, by dipping the resultant semiconductor laser devices 33 into a developer, the resist films present in the end surface portions of the bars 33 can be thinned with good controllabilities by desired portions to make the simultaneous resist-applyings and patternings of the many bars 33 possible. |
