Semiconductor memory device with capacitor

摘要

The semiconductor memory device with capacitor comprises a transfer transistor formed on a substrate, including drain and source regions. A storage capacitor is electrically coupled to one of drain and source regions of the transfer transistor. The storage capacitor includes a trunk-like conductive layer, with a bottom part electrically coupled to one of drain and source region of the transfer transistor, and with an upwardly extending part from the bottom part with an approximately upward direction. A branch-like up conductive layer is electrically coupled to above of the trunk-like conductive layer. At least one branch-like down conductive layer with one cross section like L-shape and connected to on down surface of the branch-like up conductive layer. The trunk-like conductive layer, the branch-like up conductive layer, and branch-down conductive layer constitute one storage electrode of the storage capacitor. A dielectric is formed on the trunk-like conductive layer, the branch-type up conductive layer, and exposed surface of the branch-like down conductive layer. An up conductive layer is formed on the dielectric to constitute one opposed electrode of the storage capacitor.