发明名称 |
Isolated power transistor |
摘要 |
A high current power transistor is provided that comprises a drain region that includes a highly-doped drain region (54) and a lightly-doped drain region (50). The channel region (52) is activated by a gate conductor (32). The channel region separates the lightly-doped drain region (50) from a D-well region (40). A sidewall insulator body (44) is used to form the lightly-doped drain region (50) and the lightly-doped drain region (54). The transistor is formed in an active region (20) which comprises a portion of an n-type epitaxial layer (12) formed outwardly from a p-type substrate (10). The isolation structures (14) and (16) as well as the epitaxial layer (12) provides for a transistor that can be used in both source follower and common source configurations.
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申请公布号 |
US5719423(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19960697661 |
申请日期 |
1996.08.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TODD, JAMES R.;COTTON, DAVID;JONES, III, ROY CLIFTON |
分类号 |
H01L21/336;H01L21/761;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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