| 摘要 |
In producing a semiconductor device having GOLD structure, a conductive film containing mainly silicon, tungsten, or/and molybdenum is etched by anisotropic etching using halogen fluoride (such as ClF, ClF3, BrF, BrF3, IF, and IF3) as an etching gas, without producing plasma. In this anisotropic etching, a chamber is maintained to obtain a high vacuum state. Molecular beams of halogen fluoride generated by an evaporator is irradiated into the substrate in a vertical direction (right angle) substantially to the substrate, in order to increase the degree of vertical etching to the substrate than that of horizontal etching. The halogen fluoride are excited by using the RF coil and the RF power source to promote etching.
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