发明名称 |
Method for isolating elements of semiconductor device |
摘要 |
A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.
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申请公布号 |
US5719086(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19960742885 |
申请日期 |
1996.11.01 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, YOUNG BOG;KWON, SUNG KU;CHO, BYUNG JIN;KIM, JONG CHOUL |
分类号 |
H01L21/316;H01L21/32;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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