发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an SAW device with a stable temperature characteristic in which a peak temperature is obtained in the neighborhood of a normal temperature, and frequency charging amounts are small. SOLUTION: An IDT electrode 2 in which the width of an electrode line is about 3μm, electrode logarithm is 200 pairs, and the crossing width of the electrode is 50λis provided an a 45 deg. X-Z LBO piezoelectric substrate 1. The IDT electrode 2 forms an AL film by a vacuum evaporating method, and the AL film is formed as a comb electrode by a lift-off method. At the time of forming an SAW device D1 by providing each 100 pieces of reflectors 3 at the both end parts of the IDT electrode 2, and defining the normalized film width of the IDT electrode 2 as 0.016, a summit temperature is 27.5 deg.C, and frequency changing amounts within a temperature range -30-80 deg.C are about 500ppm.
申请公布号 JPH1041777(A) 申请公布日期 1998.02.13
申请号 JP19960197912 申请日期 1996.07.26
申请人 KYOCERA CORP 发明人 KAGANOI EMI;FUNEMI MASAYUKI;ITO MIKI;OTSUKA KAZUHIRO;KATSUTA HIROHIKO
分类号 H03H9/145;H03H9/25;(IPC1-7):H03H9/25 主分类号 H03H9/145
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