| 摘要 |
<p>PROBLEM TO BE SOLVED: To use a new protection film which can be formed by a simple manufacturing method by coating the surface of a compound semiconductor substrate with a film formed of a nitride of an element forming the semiconductor substrate and a silicon nitride formed on the nitride, and performing a heat treatment. SOLUTION: Gallium atoms 1 and arsenic atoms 2 on the surface of a gallium arsenide(GaAs) substrate are heated to a high temperature. Then arsenic atoms 2 are vaporized and the substrate surface enters a gallium-rich state. When ammonia plasma comes into contact with this surface, it is considered that nitride atoms 3 are bonded to gallium atoms 1 to produce a gallium nitride(GaN) on the substrate surface. Further, nitride atoms 3 and silicon atoms are deposited by being brought into contact with monosilane plasma and ammonia plasma by an ordinary method to form a silicon nitride film. A gallium nitride film which is thus formed is continuous on the gallium arsenide substrate.</p> |
