Micro electronic vertical semiconductor element for e.g. gallium arsenide substrate

摘要

The element includes a semiconductor body provided with an active semiconductor material contact which (101) in a horizontal direction from one conductive zone (102) is surrounded at a predetermined distance. Within this zone the charge carrier density of a predetermined charge carrier type is varied opposite the semiconductor region lying between it. The semiconductor body in a predetermined distance from the material contact is provided with a second conductivity type zone (110) which lies opposite semiconductor regions (103) of varying charge density intermediate the contacts. These latter zones of second conductivity lie in a vertical direction w.r.t. initial conductivity zones and in a horizontal parallel running plane.