CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR

摘要

A structure including a film of a desired perovskite which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The orientation of the perovskite of the template is rotated 45 DEG with the respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from the fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film (84) is built up upon a semiconductor based material (72) and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component. This process can be used to form FFETs with semiconducting substrate (72), a transistor (70), a source and drain (78, 80), gate electrode (82) and a gate dielectric (83). The perovskite (84) is part of the gate electrode.