Method of adjusting a threshold voltage of a semiconductor on insulator device

摘要

A method of adjusting a threshold voltage for a semiconductor device with a doped channel on an SOI substrate comprises forming a gate structure (16) on an isolated active region (13) and forming a patterned photoresist leaving the active region exposed. The active region is dopant-implanted (22), the gate preventing implant beneath it, a second dopant (25) of second conductivity type is implanted through the gate and the photoresist, which stops both dopants, is removed and the dopants annealed. Also claimed are: (i) a method of mfg. a semiconductor device as above in which the gate structure comprises poly-Si on oxide and a spacer surround the gate; (ii) a method of mfg. a low-power, lateral semiconductor device as above; (iii) a method of adjusting a threshold voltage as above, additionally implanting a third dopant into the active region under the gate.