Electrode manufacturing method for semiconductor device

摘要

The manufacturing method involves forming an insulation layer on a semiconductor substrate (11). A wolfram silicide layer (13) is formed on the insulating layer. Impurity ions are implanted in the wolfram silicide layer to form an impurity region in a lower region of the wolfram silicide layer. The method further involves carrying out a heat treatment of the substrate on which the wolfram silicide layer is formed. A second insulating layer is formed on the wolfram silicide layer. The layers are then structured to form a gate electrode in a given part of the substrate. Second impurity ions are implanted in the substrate. The gate electrode is used as a mask to form the source and drain regions.