SEMICONDUCTOR COMPONENT WITH LINEAR CURRENT-TO-VOLTAGE CHARACTERISTICS

摘要

A semiconductor device is disclosed to obtain linear current-to-voltage characteristics through the origin of coordinates and additionally combined with a bi-directional structure. The typical device contains an oxide layer (20) on top of a p- doped substrate (10). On top of this oxide layer a n-type drift region (30) is created which forms a longitudinal n-drift region. The ndrift region comprises at each end a low doped p-type well (32) which has a portion (31) with strongly doped p+ semiconductor material which will constitute contacting to either a source or a drain electrode (35). Each ptype well (32) additionally contains a n+ area (33) and additionally on top of said p-type well a gate electrode (34), whereby the n+ doped area (33) is positioned in the p-well (32) between a gate and a drain electrode or a gate and a source electrode, respectively. Thus a bi-directional double DMOS structure is created having a common drift region.