| 摘要 |
<p>A radiation sensor comprising a field effect transistor (1) is disclosed. The transistor (1) comprises a substrate (2) and a doped gate layer (3) on the substrate (2). An insulating layer (4) is provided on the gate layer (3), and interdigitated source (5) and drain (6) regions are provided on the insulating layer (4). An active layer (7) including at least one organic semiconductor material is arranged between the source and drain regions. Ionising radiation incident on the detector causes changes in the electrical properties of the detector, and the electrical properties provide an indication of the integrated radiation dose incident upon the detector.</p> |
