| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable other semiconductor devices to be formed on the same substrate as that on which a thin-film varistor is formed by a method, wherein a low-resistance silicon film doped with high concentration impurities is formed on a base thin-film substrate, so as to form a varistor on the silicon film. SOLUTION: A single-crystalline silicon film or a low-resistance silicon film 12, made conductive by doping a polysilicon film with high concentration impurities, is formed. Next, a silicon nitride (Si3 N4 ) film 13 is laminated by pressure- reduced CVD process on the partly removed low-resistance silicon film 12. Further, an upper side electrode 14 made of a metallic film, e.g. aluminum, etc., is formed on the silicon nitride film 13 by a means, e.g. evaporation, etc. Furthermore, a lower side electrode 15, also made of the same metallic film as that of the upper side electrode 14, is formed on the exposed part whereon the varistor is not formed on the low-resistance silicon film 12.</p> |
