| 摘要 |
PROBLEM TO BE SOLVED: To ensure repeated accuracy for the temperature measurement of a wafer by a method, wherein a lamp-heating furnace for nitrooxide film manufacture use is provided with a radiation thermometer, which uses a temperature measuring infrared wavelength in the extent of a specified wavelength, a temperature-measuring window material, which consists of a metallic oxide single crystal substance, for the radiation thermometer and a means for purging the surface of this window material with N2 at the time of a temperature drop in heat treatment. SOLUTION: A radiation thermometer 600 has a structure, wherein a sapphire plate of a thickness of 0.5 to 1mm is mounted to a radiation thermometer main body 601 as a temperature-measuring window 603, the main body 601 is provided with an N2 nozzle 607 arranged between branch pipes 300 and the window 603 and N2 gas can be fed to the inner surface of the window 603 and the inner surfaces of the branch pipes 300 through a valve 608. A temperature-measuring infrared wavelength is limited to a wavelength of 4 to 8μm, a sapphire, which is a metallic oxide single crystal substance, is used as the temperature- measuring window material or the radiation thermometer and the surface of this temperature measuring window material for the radiation thermometer in a lamp-heating furnace is purged with N2 at the time of a temperature drop in heat treatment, whereby the temperature measurement accuracy of a wafer is ensured, a reaction to the surface of the window 603 is prevented from being generated and the reproducibility in the formation of a nitrooxide film is improved.
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