发明名称 Piezoresistive silicon pressure sensor manufacture implementing long diaphragms with large aspect ratios
摘要 A form pressure sensor diaphragm and method of making that allows for formation of long rectangular plate structures in semiconducting materials, especially silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.
申请公布号 US5714690(A) 申请公布日期 1998.02.03
申请号 US19960696020 申请日期 1996.08.09
申请人 HONEYWELL INC. 发明人 BURNS, DAVID W.;GLENN, MAX C.
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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