发明名称 |
Piezoresistive silicon pressure sensor manufacture implementing long diaphragms with large aspect ratios |
摘要 |
A form pressure sensor diaphragm and method of making that allows for formation of long rectangular plate structures in semiconducting materials, especially silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of pressure on a single device.
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申请公布号 |
US5714690(A) |
申请公布日期 |
1998.02.03 |
申请号 |
US19960696020 |
申请日期 |
1996.08.09 |
申请人 |
HONEYWELL INC. |
发明人 |
BURNS, DAVID W.;GLENN, MAX C. |
分类号 |
G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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