| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance value of memory node. SOLUTION: In a trench-type memory cell, a second conductive material 107 other than polysilicon is buried in a memory node besides a first conductive material (polysilicon). One element selected out of WSi, TiSi, W, Ti, and TiN is used as the second conductive material. The added conductive material serves to enable a memory node to be lessened in resistance and sense delay and improved in access speed. By this setup, a memory cell of 256 megabits or above can be easily realized. |
