| 摘要 |
A checking transistor for checking selected regions a semiconductor substrate containing radiation-hardened semiconductor circuitry having a plurality of transistors according to the present invention comprises a source region of the other conductivity type and a drain region of the other conductivity type formed on the semiconductor substrate through the same fabrication steps as those used to fabricate usual transistors, a second impurity region of the one conductivity type formed between the source region and the drain region through the same fabrication steps as those used to fabricate the first impurity region, an oxide film formed on the source region, the drain region and the second impurity region, the oxide film having the same thickness as that of the second field oxide film, an insulating film provided on the oxide film, the insulating film having the same thickness as that of the interlayer insulating film and a gate. electrode provided on the insulating film.
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