| 摘要 |
FIELD: semiconductor technology. SUBSTANCE: detector manufactured by proposed process is used for recording of pulse ionizing radiation and for examination of spectral composition and density of flux of high-intensity radiation of electrophysical plants, specifically, of linear accelerators, pulse reactors. Process of manufacture of sensitive elements for semiconductor detectors of pulse ionizing radiation based on cadmium telluride is characterized by positioning of CdTe pellets one after another on substrate which heat capacity meets condition C <Ct, where Ct is summary heat capacity of pellets. Before sintering substrate with pellets is placed in zone in furnace with temperature 470-670 K FOR 5.0 min with rate V1>5.0 cm/s, then substrate is brought into zone of furnace with constant temperature of interval T=970-1170 K, pellets are sintered in the course of 0.3-3.0 min. After this substrate is brought with rate V2>10 cm/s into zone of furnace having temperature T<370 K. All operations are carried out in atmosphere of pure argon. In compliance with invention before execution of above-mentioned operations powder of cadmium telluride meant for frontal and rear layers of each pellet is treated with diluted nitric acid in the course of 20-30 s, is rinsed with deionized water and dried. Rear layer is formed from obtained powder, is prepressed, medium layer is formed from starting powder of CdTe, these two layers are prepressed and frontal layer having thickness 0.3 mm<d<= l, where l is length of total absorption of quanta of cut-off soft region of spectrum is formed on medium layer. Produced pellets of CdTe are finally pressed. EFFECT: enhanced efficiency of process.
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