| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having a high max. output of emission, superior emission efficiency and superior high speed response. SOLUTION: An n-AlGaInP lower clad layer 2, p-GaInP active layer 4, first AlGaP upper clad layer 5 and second p-AlGaInP upper clad layer 7 are epitaxially grown on a GaAs substrate 1. A superlattice layer 3 is formed at a position adjacent to the active layer 4 as a part of the lower clad layer 2. A multiple quantum barrier layer 6 is formed at a position adjacent to the first clad layer 5 as a part of the second clad layer 7. The first clad layer 5 is a resonance tunneling-prevented layer. The active layer 4 is set as thin as to 0.1-2.0 microns. Owing to a mini-band communicating with the active layer 4 formed on the super-lattice layer 3, electrons are efficiently injected into the active layer 4 and efficiently confined in the active layer 4 by the potential barrier enhanced by the tunneling prevented layer and barrier layer 6, thus improving the electron confining efficiency. |
