发明名称 JIG FOR SEMICONDUCTOR HEAT TREATMENT
摘要 <p>PROBLEM TO BE SOLVED: To prevent deformation under high temperature, to have strength corresponding to an automatic carriage system and a large-diameter wafer, and to prevent the generation of slip on the wafer during the heat oxidation and diffusion treatment of the wafer. SOLUTION: A jig is provided with an upper plate 1, a lower plate 2 and struts 3 and 11 for linking these plates, the wafer is held by a plurality of grooves 3a and 11a provided on the struts 3 and 11 and among the struts 3 and 11, at least the struts 11 for holding both sides are formed wider. Then, the thickness of the wider struts 11 at positions closer to the central parts of pillar parts 11b by 1.0mm from top end faces 11e of the pillar parts 11b is made not thinned than 0.7mm by curring or tilting the top end faces 11e of the pillar parts 11b at an angle more than 45 deg., notching the sections of pillar parts 11e including the top end faces 11e, or expanding the top end faces 11e of the pillar parts 11b.</p>
申请公布号 JPH1022228(A) 申请公布日期 1998.01.23
申请号 JP19960174604 申请日期 1996.07.04
申请人 SUMITOMO METAL IND LTD 发明人 MINAGAWA KAZUHIRO;TAKASAGO YUKIO
分类号 H01L21/683;H01L21/205;H01L21/22;H01L21/31;H01L21/68;(IPC1-7):H01L21/22 主分类号 H01L21/683
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