| 摘要 |
<p>The present invention relates to the production of highly efficient films for electron field emitters and more particularly to the production of diamond films having excellent electronic emission characteristics. The deposition of the diamond films onto a substrate is performed in mixture of hydrogen and of a carbon-containing gas which is present in the gas flow in an amount between 2 and 10 %. The deposition is performed through a protection grid-type screen located between a metallic thread and the substrate, wherein said metallic thread and substrate are previously heated in the hydrogen flow at temperatures ranging from 1800 to 2800° C and from 650 to 900° C, respectively. After the formation of a diamond film having a desired thickness, graphite phase excess is removed in the hydrogen. This method may use methane as carbon-containing gas in a 2-8 % amount in the gas flow. Just before depositing the diamond film onto the silicon substrate, naturally occurring silicon oxide is removed from the latter in the hydrogen flow, the coil and the substrate being at temperatures allowing for the deposition. A silicon carbide layer is then formed on the substrate by feeding a 5-20 % amount of methane into the gas flow for a period between 4 and 20 min. After the deposition of a diamond film using a 2-8 % concentration of methane in the gas flow, the graphite phase excess is removed in the hydrogen flow during a period between 3 and 10 min.</p> |
